Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser
Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.
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sg-ntu-dr.10356-883432020-09-26T22:18:03Z Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang School of Electrical and Electronic Engineering High-Brightness Sources and Light-driven Interactions Congress 2018 Nanoelectronics Centre of Excellence Temasek Laboratories Semiconductor Lasers Mode-locked Lasers Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0. Published version 2018-04-17T05:14:20Z 2019-12-06T17:01:09Z 2018-04-17T05:14:20Z 2019-12-06T17:01:09Z 2018-03-01 2018 Conference Paper Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Ng, G. I., et al. (2018, March). Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser. Paper presented at High-Brightness Sources and Light-driven Interactions Congress 2018, Strasbourg, France. Optical Society of America. https://hdl.handle.net/10356/88343 http://hdl.handle.net/10220/44689 10.1364/MICS.2018.MT1C.5 204011 en © 2018 The author(s) and Optical Society of America (OSA). This paper was presented in High-Brightness Sources and Light-driven Interactions Congress 2018 and is made available as an electronic reprint (preprint) with permission of the author(s) and OSA. The published version is available at: [http://dx.doi.org/10.1364/MICS.2018.MT1C.5]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 2 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
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DR-NTU |
| language |
English |
| topic |
Semiconductor Lasers Mode-locked Lasers |
| spellingShingle |
Semiconductor Lasers Mode-locked Lasers Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
| description |
Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang |
| format |
Conference or Workshop Item |
| author |
Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang |
| author_sort |
Li, Xiang |
| title |
Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
| title_short |
Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
| title_full |
Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
| title_fullStr |
Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
| title_full_unstemmed |
Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
| title_sort |
characteristic temperature of a 2 µm ingasb/algaassb mode-locked quantum well laser |
| publishDate |
2018 |
| url |
https://hdl.handle.net/10356/88343 http://hdl.handle.net/10220/44689 |
| _version_ |
1681057701401985024 |