Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.

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書目詳細資料
Main Authors:	Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
其他作者:	School of Electrical and Electronic Engineering
格式:	Conference or Workshop Item
語言:	English
出版:	2018
主題:	Semiconductor Lasers Mode-locked Lasers
在線閱讀:	https://hdl.handle.net/10356/88343 http://hdl.handle.net/10220/44689
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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