Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Mode locking is achieved in a 2 μm monolithic GaSb-based laser. The repetition frequency of the laser, as a function of temperature and injection current, is investigated. The reasons for the frequency tuning are discussed.

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Bibliographic Details
Main Authors: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2018
Subjects:
Semiconductor Lasers
Mode-locked Lasers
Online Access:https://hdl.handle.net/10356/88347
http://hdl.handle.net/10220/44690
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Institution: Nanyang Technological University
Language: English
Description
Summary:Mode locking is achieved in a 2 μm monolithic GaSb-based laser. The repetition frequency of the laser, as a function of temperature and injection current, is investigated. The reasons for the frequency tuning are discussed.

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