Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser
Mode locking is achieved in a 2 μm monolithic GaSb-based laser. The repetition frequency of the laser, as a function of temperature and injection current, is investigated. The reasons for the frequency tuning are discussed.
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sg-ntu-dr.10356-883472020-09-26T22:14:59Z Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang School of Electrical and Electronic Engineering High-Brightness Sources and Light-driven Interactions Congress 2018 Nanoelectronics Centre of Excellence Temasek Laboratories Semiconductor Lasers Mode-locked Lasers Mode locking is achieved in a 2 μm monolithic GaSb-based laser. The repetition frequency of the laser, as a function of temperature and injection current, is investigated. The reasons for the frequency tuning are discussed. Published version 2018-04-17T05:47:46Z 2019-12-06T17:01:14Z 2018-04-17T05:47:46Z 2019-12-06T17:01:14Z 2018-01-01 2018 Conference Paper Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Ng, G. I., et al. (2018, March). Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser. Paper presented at High-Brightness Sources and Light-driven Interactions Congress 2018, Strasbourg, France. Optical Society of America. https://hdl.handle.net/10356/88347 http://hdl.handle.net/10220/44690 10.1364/MICS.2018.MT1C.4 204015 en © 2018 The author(s) and Optical Society of America (OSA). This paper was presented in High-Brightness Sources and Light-driven Interactions Congress 2018 and is made available as an electronic reprint (preprint) with permission of the author(s) and OSA. The published version is available at: [http://dx.doi.org/10.1364/MICS.2018.MT1C.4]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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Semiconductor Lasers Mode-locked Lasers |
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Semiconductor Lasers Mode-locked Lasers Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
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Mode locking is achieved in a 2 μm monolithic GaSb-based laser. The repetition frequency of the laser, as a function of temperature and injection current, is investigated. The reasons for the frequency tuning are discussed. |
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School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang |
format |
Conference or Workshop Item |
author |
Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Liu, Chongyang |
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Li, Xiang |
title |
Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
title_short |
Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
title_full |
Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
title_fullStr |
Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
title_full_unstemmed |
Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser |
title_sort |
temperature- and current-dependent repetition frequency of a 2 µm ingasb/algaassb mode-locked quantum well laser |
publishDate |
2018 |
url |
https://hdl.handle.net/10356/88347 http://hdl.handle.net/10220/44690 |
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1681056085817950208 |