Modification and control of topological insulator surface states using surface disorder

Modification and control of topological insulator surface states using surface disorder

We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three-dimensional topological insulator, by introducing strong disorder in a layer of depth d extending inward from the surface of the topological insulator. The dependence on d of th...

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Bibliographic Details
Main Authors: Sacksteder, Vincent, Ohtsuki, Tomi, Kobayashi, Koji
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2018
Subjects:
Topological Insulator
Surface Disorder
DRNTU::Science::Physics
Online Access:https://hdl.handle.net/10356/88525
http://hdl.handle.net/10220/45844
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/88525
http://hdl.handle.net/10220/45844

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