Modification and control of topological insulator surface states using surface disorder

• المؤلفون الرئيسيون: Sacksteder, Vincent, Ohtsuki, Tomi, Kobayashi, Koji
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Topological Insulator; Surface Disorder; DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88525; http://hdl.handle.net/10220/45844
• المؤسسة: Nanyang Technological University

We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three-dimensional topological insulator, by introducing strong disorder in a layer of depth d extending inward from the surface of the topological insulator. The dependence on d of th...