Modification and control of topological insulator surface states using surface disorder
We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three-dimensional topological insulator, by introducing strong disorder in a layer of depth d extending inward from the surface of the topological insulator. The dependence on d of th...
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Main Authors: | , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2018
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/88525 http://hdl.handle.net/10220/45844 |
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Institution: | Nanyang Technological University |
Language: | English |
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