InAlN/GaN high electron mobility transistors on Si for RF applications

• Main Author: Xing, Weichuan
• Other Authors: Ng Geok Ing
• Format: Theses and Dissertations
• Language: English
• Published: 2018
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/88831; http://hdl.handle.net/10220/45971
• Institution: Nanyang Technological University

Conventional AlGaN/GaN High Electron Mobility Transistors (HEMTs) have been proven to be a strong competitor in both high voltage and high frequency applications resulting from the intrinsic material properties of GaN such as large bandgap, high electron mobility, high electron saturation velocity...