InAlN/GaN high electron mobility transistors on Si for RF applications

InAlN/GaN high electron mobility transistors on Si for RF applications

Conventional AlGaN/GaN High Electron Mobility Transistors (HEMTs) have been proven to be a strong competitor in both high voltage and high frequency applications resulting from the intrinsic material properties of GaN such as large bandgap, high electron mobility, high electron saturation velocity...

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Bibliographic Details
Main Author:	Xing, Weichuan
Other Authors:	Ng Geok Ing
Format:	Theses and Dissertations
Language:	English
Published:	2018
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/88831 http://hdl.handle.net/10220/45971
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

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