Concentric dopant segregation in CVD-grown N-doped graphene single crystals

• Main Authors: Lin, Jinjun, Tay, Roland Yingjie, Li, Hongling, Jing, Lin, Tsang, Siu Hon, Bolker, Asaf, Saguy, Cecile, Teo, Edwin Hang Tong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Nitrogen-doped Graphene; DRNTU::Engineering::Electrical and electronic engineering; Chemical Vapor Deposition
• Online Access: https://hdl.handle.net/10356/88943; http://hdl.handle.net/10220/48351
• Institution: Nanyang Technological University

Heteroatom doping in graphene leads to bandgap opening and tunable electronic, magnetic and optical properties, which are important for graphene-based electronics applications. In recent years, scalable growth of nitrogen-doped graphene (NG) by chemical vapor deposition (CVD) has been extensively st...