Surface plasmon enhancement on infrared photodetection

InAsSb based infrared photodetector is an alternative to the existing HgCdTe, PbSnTe, and InSb counterparts, but its room temperature performance is still relatively poor. One of the ways to improve its performance is through surface plasmon, which provides near field confinement that leads to enhan...

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Bibliographic Details
Main Authors: Qiu, Shupeng, Xu, Zhengji, Tong, Jinchao, Ni, Peinan, Zhang, Dao-Hua, Tobing, Landobasa Yosef Mario
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/89397
http://hdl.handle.net/10220/46232
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Institution: Nanyang Technological University
Language: English
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Summary:InAsSb based infrared photodetector is an alternative to the existing HgCdTe, PbSnTe, and InSb counterparts, but its room temperature performance is still relatively poor. One of the ways to improve its performance is through surface plasmon, which provides near field confinement that leads to enhancement in light matter interaction. In this work, the role of each parameter of two dimensional metallic hole arrays in plasmonic enhancement is studied in details, such as the periodicity of hole array, hole diameter and metal film thickness. The plasmonic resonances and their corresponding electric field distributions are comprehensively studied in finite difference time domain simulation, which also would serve as a guide for designing surface plasmon enhanced InAsSb infrared detector with high quantum efficiency and signal-to-noise ratio.