Surface plasmon enhancement on infrared photodetection

• Main Authors: Qiu, Shupeng, Xu, Zhengji, Tong, Jinchao, Ni, Peinan, Zhang, Dao-Hua, Tobing, Landobasa Yosef Mario
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: InAsSb; Mid-infrared Photodetectors; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/89397; http://hdl.handle.net/10220/46232
• Institution: Nanyang Technological University

InAsSb based infrared photodetector is an alternative to the existing HgCdTe, PbSnTe, and InSb counterparts, but its room temperature performance is still relatively poor. One of the ways to improve its performance is through surface plasmon, which provides near field confinement that leads to enhancement in light matter interaction. In this work, the role of each parameter of two dimensional metallic hole arrays in plasmonic enhancement is studied in details, such as the periodicity of hole array, hole diameter and metal film thickness. The plasmonic resonances and their corresponding electric field distributions are comprehensively studied in finite difference time domain simulation, which also would serve as a guide for designing surface plasmon enhanced InAsSb infrared detector with high quantum efficiency and signal-to-noise ratio.