Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

• Main Authors: Abdul Kadir, Wang, Yue, Lee, Kenneth E., Tan, Chuan Seng, Chua, Soo Jin, Fitzgerald, Eugene A., Zhang, Li, Lee, Kwang Hong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Si CMOS; AlGaN Layers; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/90142; http://hdl.handle.net/10220/48410
• Institution: Nanyang Technological University

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.