Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air
Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The influence of annealing temperatures ranging from 320 to 1000 °C on the structural and optical properties of ZnO films is investigated systematically using x-ray diffraction and room temperature photolu...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90405 http://hdl.handle.net/10220/18818 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The
influence of annealing temperatures ranging from 320 to 1000 °C on the structural and optical
properties of ZnO films is investigated systematically using x-ray diffraction and room temperature
photoluminescence (PL). The films show a polycrystalline hexagonal wurtzite structure without
preferred orientation. Room temperature PL spectra of the ZnO films display two emission bands,
predominant excitonic ultraviolet (UV) emission and weak deep level visible emission. It is
observed that the ZnO film annealed at 410 °C exhibits the strongest UV emission intensity and
narrowest full width at half maximum (81 meV) among the temperature ranges studied. The
excellent UV emission from the film annealed at 410 °C is attributed to the good crystalline quality
of the ZnO film and the low rate of formation of intrinsic defects at such low temperature. The
visible emission consists of two components in the green and yellow range, and they show different
temperature dependent behavior from UV emission. Their possible origins are discussed. |
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