Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications

Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications

This paper presents novel single-pole-single-throw (SPST) and single-pole-double-throw (SPDT) switches for 57-66GHz band applications. At 60GHz band, the SPST switch exhibits...

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Bibliographic Details
Main Authors:	He, Jin, Zhang, Yue Ping
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:	https://hdl.handle.net/10356/90592 http://hdl.handle.net/10220/6346
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Institution:	Nanyang Technological University
Language:	English

Description
Summary:	This paper presents novel single-pole-single-throw (SPST) and single-pole-double-throw (SPDT) switches for 57-66GHz band applications. At 60GHz band, the SPST switch exhibits an insertion loss of 1.6dB, a return loss of 16dB, an isolation of 27dB and an input 1-dB compression point (IP1dB) of 11dBm; Correspondingly, the SPDT switch achieves an insertion loss of 3dB/2.5dB, a return loss of 12.5dB/12dB, an isolation of 22dB/22dB and an input P1dB of 12dBm/13dBm in the Tx/Rx mode, respectively. The switches are designed and implemented with STMicroelectronics 1.2V 65nm CMOS RF process.