Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications

This paper presents novel single-pole-single-throw (SPST) and single-pole-double-throw (SPDT) switches for 57-66GHz band applications. At 60GHz band, the SPST switch exhibits...

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Main Authors:	He, Jin, Zhang, Yue Ping
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:	https://hdl.handle.net/10356/90592 http://hdl.handle.net/10220/6346
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-905922020-03-07T13:24:46Z Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications He, Jin Zhang, Yue Ping School of Electrical and Electronic Engineering Asia Pacific Microwave Conference (2008 : Hong Kong, China) DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials This paper presents novel single-pole-single-throw (SPST) and single-pole-double-throw (SPDT) switches for 57-66GHz band applications. At 60GHz band, the SPST switch exhibits an insertion loss of 1.6dB, a return loss of 16dB, an isolation of 27dB and an input 1-dB compression point (IP1dB) of 11dBm; Correspondingly, the SPDT switch achieves an insertion loss of 3dB/2.5dB, a return loss of 12.5dB/12dB, an isolation of 22dB/22dB and an input P1dB of 12dBm/13dBm in the Tx/Rx mode, respectively. The switches are designed and implemented with STMicroelectronics 1.2V 65nm CMOS RF process. Published version 2010-08-23T06:42:18Z 2019-12-06T17:50:29Z 2010-08-23T06:42:18Z 2019-12-06T17:50:29Z 2008 2008 Conference Paper He, J., & Zhang, Y. P. (2008). Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications. Asia Pacific Microwave Conference (pp.1-4) Hong Kong, China. https://hdl.handle.net/10356/90592 http://hdl.handle.net/10220/6346 10.1109/APMC.2008.4958340 en © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials He, Jin Zhang, Yue Ping Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications
description	This paper presents novel single-pole-single-throw (SPST) and single-pole-double-throw (SPDT) switches for 57-66GHz band applications. At 60GHz band, the SPST switch exhibits an insertion loss of 1.6dB, a return loss of 16dB, an isolation of 27dB and an input 1-dB compression point (IP1dB) of 11dBm; Correspondingly, the SPDT switch achieves an insertion loss of 3dB/2.5dB, a return loss of 12.5dB/12dB, an isolation of 22dB/22dB and an input P1dB of 12dBm/13dBm in the Tx/Rx mode, respectively. The switches are designed and implemented with STMicroelectronics 1.2V 65nm CMOS RF process.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering He, Jin Zhang, Yue Ping
format	Conference or Workshop Item
author	He, Jin Zhang, Yue Ping
author_sort	He, Jin
title	Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications
title_short	Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications
title_full	Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications
title_fullStr	Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications
title_full_unstemmed	Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications
title_sort	design of spst/spdt switches in 65nm cmos for 60ghz applications
publishDate	2010
url	https://hdl.handle.net/10356/90592 http://hdl.handle.net/10220/6346
_version_	1681045197974142976

Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications

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