Plasma-induced quantum well intermixing for monolithic photonic integration
Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration proc...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90930 http://hdl.handle.net/10220/6420 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration process, which offers three aspects of investigation: 1) universality to a wide range of III-V compound material systems covering the wavelength range from 700 to 1600 nm; 2) spatial resolution of the process; and 3) single-step multiple bandgap creation. To verify the monolithic integration capability, a simple photonic integrated chip has been fabricated using Ar plasma-induced QWI in the form of a two-section extended cavity laser diode, where an active laser is integrated with an intermixed low-loss waveguide. |
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