Plasma-induced quantum well intermixing for monolithic photonic integration

• Main Authors: Djie, Hery Susanto, Mei, Ting
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/90930; http://hdl.handle.net/10220/6420
• Institution: Nanyang Technological University

Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration process, which offers three aspects of investigation: 1) universality to a wide range of III-V compound material systems covering the wavelength range from 700 to 1600 nm; 2) spatial resolution of the process; and 3) single-step multiple bandgap creation. To verify the monolithic integration capability, a simple photonic integrated chip has been fabricated using Ar plasma-induced QWI in the form of a two-section extended cavity laser diode, where an active laser is integrated with an intermixed low-loss waveguide.