Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence
Diffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and electron-...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91355 http://hdl.handle.net/10220/6397 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Diffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and electron-light-hole transitions and illustrate the time progression of intermixing clearly. The plasma-enhanced intermixing effect is investigated using this technique, showing the difference of intermixing development in the early and the late stages. It is seen that the calculated diffusion-length ratio may change with the annealing duration. |
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