Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence

• المؤلفون الرئيسيون: Xu, C. D., Mei, Ting, Dong, Jian Rong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91355; http://hdl.handle.net/10220/6397

Diffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and electron-...