Effect of BOE etching time on wire bonding quality

• Main Authors: Tan, Cher Ming, Linggajaya, Kaufik, Er, Eddie, Chai, Vincent Siew Heong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/91600; http://hdl.handle.net/10220/4637
• Institution: Nanyang Technological University

The dependence of wire bond-pull strength on the morphology of the underlying polycrystalline silicon (poly-Si) beneath the bondpad metal is studied using atomic force microscopy(AFM). Statistical analysis shows that the roughness of the poly-Si is correlated with the wire bond-pull strength. The correlation is believed to be due to the effectiveness of thermal dissipation through poly-Si during the wire bonding process. Statistical analysis also shows that the roughness of the poly-Si is correlated to the buffered oxide etch (BOE) etching time before the bondpad metal deposition. In this work, it is concluded that the BOE etching time has a significant effect on the wire bonding quality. The roughness parameter that links the BOE etching time to the wire bond-pull strength is found to be the localization factor.