A charge-trapping-based technique to design low-voltage BiCMOS logic circuits
New BiCMOS logic circuits employing a charge trapping technique are presented. The circuits include an XOR gate and an adder. Submicrometer technologies are used in the simulation and the circuits’ performances are comparatively evaluated with the CMOS and that of the recently reporte...
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sg-ntu-dr.10356-916152020-03-07T14:02:41Z A charge-trapping-based technique to design low-voltage BiCMOS logic circuits Rofail, Samir S. Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering New BiCMOS logic circuits employing a charge trapping technique are presented. The circuits include an XOR gate and an adder. Submicrometer technologies are used in the simulation and the circuits’ performances are comparatively evaluated with the CMOS and that of the recently reported circuits. The proposed circuits were fabricated using a standard 0.8-µm BiCMOS process. The experimental results obtained from the fabricated chip have verified the functionality of the proposed logic gates. Published version 2009-08-03T04:29:03Z 2019-12-06T18:08:58Z 2009-08-03T04:29:03Z 2019-12-06T18:08:58Z 1998 1998 Journal Article Yeo, K. S., & Samir, S. R. (1998). A charge-trapping-based technique to design low-voltage BiCMOS logic circuits. IEEE Journal of Solid-State Circuits, 33(1), 164-168. 0018-9200 https://hdl.handle.net/10356/91615 http://hdl.handle.net/10220/6007 10.1109/4.654950 en IEEE journal of solid-state circuits IEEE Journal of Solid-State Circuits © 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 5 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Rofail, Samir S. Yeo, Kiat Seng A charge-trapping-based technique to design low-voltage BiCMOS logic circuits |
description |
New BiCMOS logic circuits employing a charge
trapping technique are presented. The circuits include an XOR gate and an adder. Submicrometer technologies are used in the simulation and the circuits’ performances are comparatively evaluated with the CMOS and that of the recently reported circuits. The proposed circuits were fabricated using a standard 0.8-µm BiCMOS process. The experimental results obtained from the fabricated chip have verified the functionality of the proposed logic gates. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Rofail, Samir S. Yeo, Kiat Seng |
format |
Article |
author |
Rofail, Samir S. Yeo, Kiat Seng |
author_sort |
Rofail, Samir S. |
title |
A charge-trapping-based technique to design low-voltage BiCMOS logic circuits |
title_short |
A charge-trapping-based technique to design low-voltage BiCMOS logic circuits |
title_full |
A charge-trapping-based technique to design low-voltage BiCMOS logic circuits |
title_fullStr |
A charge-trapping-based technique to design low-voltage BiCMOS logic circuits |
title_full_unstemmed |
A charge-trapping-based technique to design low-voltage BiCMOS logic circuits |
title_sort |
charge-trapping-based technique to design low-voltage bicmos logic circuits |
publishDate |
2009 |
url |
https://hdl.handle.net/10356/91615 http://hdl.handle.net/10220/6007 |
_version_ |
1681034898815582208 |