Temperature and stress distribution in the SOI structure during fabrication

• المؤلفون الرئيسيون: Tan, Cher Ming, Gan, Zhenghao, Gao, Xiaofang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91726; http://hdl.handle.net/10220/4654

Silicon wafer bonding technology is becoming one of the key technologies in the silicon-on-insulator (SOI) structure fabrication. However, the high-temperature heat treatment during SOI fabrication is inevitable, and the thermal stress thus induced could have an adverse effect on the device fabricat...