New salicidation technology with Ni(Pt) alloy for MOSFETs
A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by formi...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2012
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/91823 http://hdl.handle.net/10220/8340 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | A novel salicide technology to improve the thermal
stability of the conventional Ni silicide has been developed by employing
Ni(Pt) alloy salicidation. This technique provides an effective
avenue to overcome the low thermal budget (<700 °C) of
the conventional Ni salicidation by forming Ni(Pt)Si. The addition
of Pt has enhanced the thermal stability of NiSi. Improved
sheet resistance of the salicided narrow poly-Si and active lines was
achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness
of 30 nm and 15 nm, respectively. This successfully extends the
rapid thermal processing (RTP) windowby delaying the nucleation
of NiSi2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation
was demonstrated on PMOSFETs with high drive current
and low junction leakage. |
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