Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

• Main Authors: Xu, S. J., Li, G. Q., Wang, Y. J., Zhao, Yang, Chen, Guan Hua, Zhao, D. G., Zhu, J. J., Yang, H., Yu, D. P., Wang, J. N.
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2011
• 主題: DRNTU::Science::Physics::Optics and light; DRNTU::Engineering::Materials::Photonics and optoelectronics materials
• 在線閱讀: https://hdl.handle.net/10356/92236; http://hdl.handle.net/10220/6728
• 機構: Nanyang Technological University

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are...