Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

• Main Authors: Xu, S. J., Li, G. Q., Wang, Y. J., Zhao, Yang, Chen, Guan Hua, Zhao, D. G., Zhu, J. J., Yang, H., Yu, D. P., Wang, J. N.
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Science::Physics::Optics and light; DRNTU::Engineering::Materials::Photonics and optoelectronics materials
• Online Access: https://hdl.handle.net/10356/92236; http://hdl.handle.net/10220/6728
• Institution: Nanyang Technological University

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ~0.2 and 200 cm−1, respectively, for the InGaN QDs.