Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are...
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sg-ntu-dr.10356-922362023-07-14T15:51:49Z Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots Xu, S. J. Li, G. Q. Wang, Y. J. Zhao, Yang Chen, Guan Hua Zhao, D. G. Zhu, J. J. Yang, H. Yu, D. P. Wang, J. N. School of Materials Science & Engineering DRNTU::Science::Physics::Optics and light DRNTU::Engineering::Materials::Photonics and optoelectronics materials Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ~0.2 and 200 cm−1, respectively, for the InGaN QDs. Published version 2011-03-03T03:45:30Z 2019-12-06T18:19:47Z 2011-03-03T03:45:30Z 2019-12-06T18:19:47Z 2006 2006 Journal Article Xu, S. J., Li, G. Q., Wang, Y. J., Zhao, Y., Chen, G. H., Zhao, D. G., et al. (2006). Quantum dissipation and broadening mechanisms due to electron-phonon interactions in Si-doped self-formed InGaN quantum dots, Applied Physics Letters 88, 1-3. https://hdl.handle.net/10356/92236 http://hdl.handle.net/10220/6728 10.1063/1.2179113 en Applied physics letters © 2006 AIP. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [Doi: http://dx.doi.org/10.1063/1.2179113]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
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DRNTU::Science::Physics::Optics and light DRNTU::Engineering::Materials::Photonics and optoelectronics materials Xu, S. J. Li, G. Q. Wang, Y. J. Zhao, Yang Chen, Guan Hua Zhao, D. G. Zhu, J. J. Yang, H. Yu, D. P. Wang, J. N. Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots |
| description |
Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ~0.2 and 200 cm−1, respectively, for the InGaN QDs. |
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School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Xu, S. J. Li, G. Q. Wang, Y. J. Zhao, Yang Chen, Guan Hua Zhao, D. G. Zhu, J. J. Yang, H. Yu, D. P. Wang, J. N. |
| format |
Article |
| author |
Xu, S. J. Li, G. Q. Wang, Y. J. Zhao, Yang Chen, Guan Hua Zhao, D. G. Zhu, J. J. Yang, H. Yu, D. P. Wang, J. N. |
| author_sort |
Xu, S. J. |
| title |
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots |
| title_short |
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots |
| title_full |
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots |
| title_fullStr |
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots |
| title_full_unstemmed |
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots |
| title_sort |
quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed ingan quantum dots |
| publishDate |
2011 |
| url |
https://hdl.handle.net/10356/92236 http://hdl.handle.net/10220/6728 |
| _version_ |
1772826469310922752 |