1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process
We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved outp...
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sg-ntu-dr.10356-922872021-01-06T03:07:03Z 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process Yoon, Soon Fatt Tong, Cunzhu Fan, Weijun Ding, Y. Zhao, L. J. Xu, D. W. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed. Accepted version 2011-03-08T06:46:37Z 2019-12-06T18:20:43Z 2011-03-08T06:46:37Z 2019-12-06T18:20:43Z 2011 2011 Journal Article Xu, D. W., Yoon, S. F., Ding, Y., Tong, C., Fan, W., & Zhao, L. J. (2011). 1.3-μm In(Ga)As Quantum-dot VCSELs Fabricated by Dielectric-free Approach with Surface-relief Process. IEEE photonics technology letters, 23(2), 91-93. 1041-1135 https://hdl.handle.net/10356/92287 http://hdl.handle.net/10220/6756 10.1109/LPT.2010.2091269 156404 en IEEE Photonics Technology Letters IEEE photonics technology letters © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/LPT.2010.2091269]. 11 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Yoon, Soon Fatt Tong, Cunzhu Fan, Weijun Ding, Y. Zhao, L. J. Xu, D. W. 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process |
| description |
We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed. |
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School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Yoon, Soon Fatt Tong, Cunzhu Fan, Weijun Ding, Y. Zhao, L. J. Xu, D. W. |
| format |
Article |
| author |
Yoon, Soon Fatt Tong, Cunzhu Fan, Weijun Ding, Y. Zhao, L. J. Xu, D. W. |
| author_sort |
Yoon, Soon Fatt |
| title |
1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process |
| title_short |
1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process |
| title_full |
1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process |
| title_fullStr |
1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process |
| title_full_unstemmed |
1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process |
| title_sort |
1.3-μm in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process |
| publishDate |
2011 |
| url |
https://hdl.handle.net/10356/92287 http://hdl.handle.net/10220/6756 |
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1688665388503531520 |