1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

• Main Authors: Yoon, Soon Fatt, Tong, Cunzhu, Fan, Weijun, Ding, Y., Zhao, L. J., Xu, D. W.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/92287; http://hdl.handle.net/10220/6756
• Institution: Nanyang Technological University

We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved outp...