Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

• المؤلفون الرئيسيون: Zhang, T., Darmawan, P., Setiawan, Y., Seng, H. L., Chan, T. K., Osipowicz, T., Chan, Mei Yin, Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94047; http://hdl.handle.net/10220/8038
• المؤسسة: Nanyang Technological University

Effect of Ge out diffusion into Lu2O3 /Al2O3 high-k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high-k film. The electrical me...