Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process

• Main Authors: Chen, Z., Wang, W. D., Xu, S., Law, S. B., Ee, Elden Yong Chiang, Chi, Dong Zhi
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Plasma treatment
• Online Access: https://hdl.handle.net/10356/94473; http://hdl.handle.net/10220/8206
• Institution: Nanyang Technological University

A ternary barrier film TiSiN was prepared by low frequency, high density inductively coupled plasma (ICP) implantation of N into TiSi substrate. This leads to the formation of Ti–N and Si–N compounds in the ternary film. Using this technique, 5–20-nm-thick TiSiN films were successfully grown over di...