Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process

Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion barrier material in copper/low-k dielectric back-end-of-line device fabrication. Low frequency, high density inductively coupled plasma process has been developed for the growth of Ti–Si–N film. This w...

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Bibliographic Details
Main Authors: Rutkevych, P. P., Zeng, K. Y., Chen, Z., Chan, L., See, K. H., Law, S. B., Xu, S., Tsakadze, Z. L., Shen, L., Ee, Elden Yong Chiang
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/94919
http://hdl.handle.net/10220/7695
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Institution: Nanyang Technological University
Language: English