Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process
Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion barrier material in copper/low-k dielectric back-end-of-line device fabrication. Low frequency, high density inductively coupled plasma process has been developed for the growth of Ti–Si–N film. This w...
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Main Authors: | , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2012
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/94919 http://hdl.handle.net/10220/7695 |
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Institution: | Nanyang Technological University |
Language: | English |