Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process

• Main Authors: Rutkevych, P. P., Zeng, K. Y., Chen, Z., Chan, L., See, K. H., Law, S. B., Xu, S., Tsakadze, Z. L., Shen, L., Ee, Elden Yong Chiang
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/94919; http://hdl.handle.net/10220/7695
• Institution: Nanyang Technological University

Titanium silicon nitride (Ti–Si–N) has emerged as a strong candidate for next generation diffusion barrier material in copper/low-k dielectric back-end-of-line device fabrication. Low frequency, high density inductively coupled plasma process has been developed for the growth of Ti–Si–N film. This w...