Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films

• المؤلفون الرئيسيون: Lu, T. M., Law, S. B., Chen, Z., Ee, Elden Yong Chiang, Dong, Zhili
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90572; http://hdl.handle.net/10220/7700

Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, a...