Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, a...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90572 http://hdl.handle.net/10220/7700 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases
introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si,
Ti-O, Si-O, and Si-N-O compounds are formed. High-resolution-transmission-electron-microscopy reveals that the film consists of
Ti-N, Si-N, Ti-Si nanocrystals embedded in an amorphous Ti-O, Si-O, and Si-N-O matrix. This type of microstructure gives rise
to very high stability against copper diffusion under bias temperature stressing (BTS) compared to binary barrier materials. The
BTS result shows that Ti24Si12N35O29 film can effectively block copper ion diffusion for up to 200°C at 0.5 MV/cm. |
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