Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films

Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, a...

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Main Authors:	Lu, T. M., Law, S. B., Chen, Z., Ee, Elden Yong Chiang, Dong, Zhili
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Materials
Online Access:	https://hdl.handle.net/10356/90572 http://hdl.handle.net/10220/7700
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-905722023-07-14T15:52:24Z Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films Lu, T. M. Law, S. B. Chen, Z. Ee, Elden Yong Chiang Dong, Zhili School of Materials Science & Engineering DRNTU::Engineering::Materials Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, and Si-N-O compounds are formed. High-resolution-transmission-electron-microscopy reveals that the film consists of Ti-N, Si-N, Ti-Si nanocrystals embedded in an amorphous Ti-O, Si-O, and Si-N-O matrix. This type of microstructure gives rise to very high stability against copper diffusion under bias temperature stressing (BTS) compared to binary barrier materials. The BTS result shows that Ti24Si12N35O29 film can effectively block copper ion diffusion for up to 200°C at 0.5 MV/cm. Published version 2012-04-09T07:56:50Z 2019-12-06T17:50:06Z 2012-04-09T07:56:50Z 2019-12-06T17:50:06Z 2006 2006 Journal Article Ee, E. Y. C., Chen, Z., Lu, T. M., Dong, Z. L., & Law, S. B. (2006). Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films. Electrochemical and solid state letters, 9(3). https://hdl.handle.net/10356/90572 http://hdl.handle.net/10220/7700 10.1149/1.2166510 en Electrochemical and solid state letters © 2006 The Electrochemical Society. This paper was published in Electrochemical and Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following DOI: http://dx.doi.org/ 10.1149/1.2166510. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials
spellingShingle	DRNTU::Engineering::Materials Lu, T. M. Law, S. B. Chen, Z. Ee, Elden Yong Chiang Dong, Zhili Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
description	Ti-Si-N-O films were grown by radio frequency reactive magnetron sputtering of a titanium target with nitrogen and silane gases introduced at a temperature of 40°C. X-ray diffraction and X-ray photoelectron spectroscopy results show that Ti-N, Si-N, Ti-Si, Ti-O, Si-O, and Si-N-O compounds are formed. High-resolution-transmission-electron-microscopy reveals that the film consists of Ti-N, Si-N, Ti-Si nanocrystals embedded in an amorphous Ti-O, Si-O, and Si-N-O matrix. This type of microstructure gives rise to very high stability against copper diffusion under bias temperature stressing (BTS) compared to binary barrier materials. The BTS result shows that Ti24Si12N35O29 film can effectively block copper ion diffusion for up to 200°C at 0.5 MV/cm.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Lu, T. M. Law, S. B. Chen, Z. Ee, Elden Yong Chiang Dong, Zhili
format	Article
author	Lu, T. M. Law, S. B. Chen, Z. Ee, Elden Yong Chiang Dong, Zhili
author_sort	Lu, T. M.
title	Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
title_short	Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
title_full	Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
title_fullStr	Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
title_full_unstemmed	Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
title_sort	low temperature physical-chemical vapor deposition of ti-si-n-o barrier films
publishDate	2012
url	https://hdl.handle.net/10356/90572 http://hdl.handle.net/10220/7700
_version_	1772828527092039680

Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films

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