Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O...

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Main Authors: Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, Pooi See, Ma, Jan
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2012
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在線閱讀:https://hdl.handle.net/10356/94591
http://hdl.handle.net/10220/8013
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機構: Nanyang Technological University
語言: English
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總結:We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8x 10^11 cm−2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ~1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.