Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics

• Main Authors: Darmawan, P., Setiawan, Y., Lai, J. C., Yang, P., Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/94913; http://hdl.handle.net/10220/8556
• Institution: Nanyang Technological University

Lu2O3 thin film was deposited on n-type (100) Si substrates using pulsed laser deposition. A k value of 15.95 with an equivalent oxide thickness (EOT) of 1.10 nm and a current density of 2.6×10−5 A/cm2 at +1 V accumulation bias is achievable for the 4.5 nm thick Lu2O3 thin film deposited at room tem...