Pulsed laser induced silicidation on TiN-capped Co/Si bilayers

Pulsed laser induced silicidation on TiN-capped Co/Si bilayers

This paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J /cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured CoSi2 gra...

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Bibliographic Details
Main Authors: Chow, F. L., Lee, Pooi See, Pey, Kin Leong, Tang, L. J., Tung, Chih Hang, Wang, X. C., Lim, G. C.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/95012
http://hdl.handle.net/10220/8022
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Institution: Nanyang Technological University
Language: English
Description
Summary:This paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J /cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured CoSi2 grains in (111) direction are formed for a high fluence of 0.7 J /cm2. The highly textured CoSi2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.

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