Pulsed laser induced silicidation on TiN-capped Co/Si bilayers

• Main Authors: Chow, F. L., Lee, Pooi See, Pey, Kin Leong, Tang, L. J., Tung, Chih Hang, Wang, X. C., Lim, G. C.
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/95012; http://hdl.handle.net/10220/8022
• Institution: Nanyang Technological University

This paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J /cm2, nonstoichiometry Co silicide with triple-layered structure is formed. On the other hand, highly textured CoSi2 grains in (111) direction are formed for a high fluence of 0.7 J /cm2. The highly textured CoSi2 layer is monocrystalline and fully coherent with the (111) plane of the Si substrate. However, it has a large amount of microstructural defects throughout the layer. Competitive growth mechanisms between crystallization of homogenous intermixed layer and the nucleation from the melt boundary are discussed.