Pyramidal structural defects in erbium silicide thin films
Pyramidal structural defects, 5–8 μm wide, have been discovered in thin films of epitaxial ErSi2−x formed by annealing thin Er films on Si(001) substrates at temperatures of 500–800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separat...
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sg-ntu-dr.10356-950152023-07-14T15:53:34Z Pyramidal structural defects in erbium silicide thin films Srolovitz, David J. Tan, Eu Jin Bouville, Mathieu Chi, Dong Zhi Pey, Kin Leong Lee, Pooi See Tung, Chih Hang School of Materials Science & Engineering DRNTU::Engineering::Materials Pyramidal structural defects, 5–8 μm wide, have been discovered in thin films of epitaxial ErSi2−x formed by annealing thin Er films on Si(001) substrates at temperatures of 500–800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate. Published version 2012-05-17T07:18:20Z 2019-12-06T19:06:32Z 2012-05-17T07:18:20Z 2019-12-06T19:06:32Z 2006 2006 Journal Article Tan, E. J., Bouville, M., Chi, D. Z., Pey, K. L., Lee, P. S., Srolovitz, D. J., et al. (2006). Pyramidal structural defects in Erbium silicide thin films. Applied Physics Letters, 88(2). https://hdl.handle.net/10356/95015 http://hdl.handle.net/10220/8074 10.1063/1.2162862 en Applied physics letters © 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2162862. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
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DRNTU::Engineering::Materials Srolovitz, David J. Tan, Eu Jin Bouville, Mathieu Chi, Dong Zhi Pey, Kin Leong Lee, Pooi See Tung, Chih Hang Pyramidal structural defects in erbium silicide thin films |
| description |
Pyramidal structural defects, 5–8 μm wide, have been discovered in thin films of epitaxial ErSi2−x
formed by annealing thin Er films on Si(001) substrates at temperatures of 500–800 °C. The
formation of these defects is not due to oxidation. We propose that they form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive,
biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Srolovitz, David J. Tan, Eu Jin Bouville, Mathieu Chi, Dong Zhi Pey, Kin Leong Lee, Pooi See Tung, Chih Hang |
| format |
Article |
| author |
Srolovitz, David J. Tan, Eu Jin Bouville, Mathieu Chi, Dong Zhi Pey, Kin Leong Lee, Pooi See Tung, Chih Hang |
| author_sort |
Srolovitz, David J. |
| title |
Pyramidal structural defects in erbium silicide thin films |
| title_short |
Pyramidal structural defects in erbium silicide thin films |
| title_full |
Pyramidal structural defects in erbium silicide thin films |
| title_fullStr |
Pyramidal structural defects in erbium silicide thin films |
| title_full_unstemmed |
Pyramidal structural defects in erbium silicide thin films |
| title_sort |
pyramidal structural defects in erbium silicide thin films |
| publishDate |
2012 |
| url |
https://hdl.handle.net/10356/95015 http://hdl.handle.net/10220/8074 |
| _version_ |
1772826352037134336 |