Pyramidal structural defects in erbium silicide thin films
Pyramidal structural defects, 5–8 μm wide, have been discovered in thin films of epitaxial ErSi2−x formed by annealing thin Er films on Si(001) substrates at temperatures of 500–800 °C. The formation of these defects is not due to oxidation. We propose that they form as a result of the separat...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95015 http://hdl.handle.net/10220/8074 |
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| Institution: | Nanyang Technological University |
| Language: | English |