Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory eff...
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| Main Authors: | , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2012
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/95023 http://hdl.handle.net/10220/8007 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge
trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory effect
was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low
voltage operation of ±4 V. The high-k barrier with graded composition provides a favorable
confinement barrier for improved hole retention with simultaneous enlargement of the memory window. |
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