Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory eff...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95023 http://hdl.handle.net/10220/8007 |
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| Institution: | Nanyang Technological University |
| Language: | English |