Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties

A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory eff...

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Main Authors:	Chan, T. K., Osipowicz, T., Chan, L., Chan, Mei Yin, Lee, Pooi See
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Materials
Online Access:	https://hdl.handle.net/10356/95023 http://hdl.handle.net/10220/8007
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-95023
record_format	dspace
spelling	sg-ntu-dr.10356-950232023-07-14T15:46:36Z Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties Chan, T. K. Osipowicz, T. Chan, L. Chan, Mei Yin Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high-k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window. Published version 2012-05-16T04:17:36Z 2019-12-06T19:06:42Z 2012-05-16T04:17:36Z 2019-12-06T19:06:42Z 2009 2009 Journal Article Chan, M. Y., Chan, T. K., Osipowicz, T., Chan, L., & Lee, P. S. (2009). Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties. Applied physics letters, 95(11). https://hdl.handle.net/10356/95023 http://hdl.handle.net/10220/8007 10.1063/1.3224188 en Applied physics letters © 2009 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.3224188. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials
spellingShingle	DRNTU::Engineering::Materials Chan, T. K. Osipowicz, T. Chan, L. Chan, Mei Yin Lee, Pooi See Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
description	A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high-k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Chan, T. K. Osipowicz, T. Chan, L. Chan, Mei Yin Lee, Pooi See
format	Article
author	Chan, T. K. Osipowicz, T. Chan, L. Chan, Mei Yin Lee, Pooi See
author_sort	Chan, T. K.
title	Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
title_short	Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
title_full	Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
title_fullStr	Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
title_full_unstemmed	Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
title_sort	lanthanide-based graded barrier structure for enhanced nanocrystal memory properties
publishDate	2012
url	https://hdl.handle.net/10356/95023 http://hdl.handle.net/10220/8007
_version_	1772827937915011072

Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties

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