Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties

• Main Authors: Chan, T. K., Osipowicz, T., Chan, L., Chan, Mei Yin, Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/95023; http://hdl.handle.net/10220/8007
• Institution: Nanyang Technological University

A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory eff...