Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test

• Main Authors: Prasad, K., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Chen, Zhong, Zhang, Sam, Chen, Zhe
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• 在線閱讀: https://hdl.handle.net/10356/95351; http://hdl.handle.net/10220/8218
• 機構: Nanyang Technological University

Adhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As the sizes of transistors are scaled down to submicron regime, new materials an...