The electronic barrier height of silicon native oxides at different oxidation stages

• Main Authors: Qin, H. L., Goh, K. E. J., Troadec, C., Bosman, Michel, Pey, Kin Leong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/95358; http://hdl.handle.net/10220/9206
• Institution: Nanyang Technological University

A systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron trans...