The electronic barrier height of silicon native oxides at different oxidation stages
A systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron trans...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/95358 http://hdl.handle.net/10220/9206 |
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| Institution: | Nanyang Technological University |
| Language: | English |