Layer-by-layer oxidation of InN(0001) thin films into body-center cubic In2O3(111) by cycle rapid thermal annealing

• Main Authors: Liu, H. F., Chi, Dong Zhi, Liu, Wei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/95618; http://hdl.handle.net/10220/10823
• Institution: Nanyang Technological University

We report on a study of In2O3 thin films obtained by post-growth thermal oxidation of InN(0001) using rapid thermal annealing (RTA) and cycle-RTA (CRTA). The crystal qualities of both the resultant In2O3 and the remaining InN were significantly improved by using CRTA instead of RTA. Body-center cubi...